DIODES IN SILICON CARBIDE BY ION IMPLANTATION

Abstract

We report here the formation of n-type layers with ion-implanted nitrogen or antimony in p-type α-SiC requiring maximum process temperatures of 1400 and 1600°C respectively for only a few minutes. This is believed to be the first confirmation of donor behavior by antimony in SiC. Electrical characteristics of these implanted layers have been evaluated by Hall and sheet resistivity measurements. Junction devices formed from the implanted layers have shown excellent forward and reverse characteristics at operating temperatures to 400°C.