Applied Physics Letters · 1992 · 96 citations · 10 references
Natural SciencesChemistryMaterials SciencePhysical ChemistrySurface ChemistrySurface ScienceSemiconductor Crystal GrowthSemiconductor SurfacesSilicon MaterialsSurface KineticsSurface PhysicsSurface Reaction KineticsChemical Beam EpitaxyEpitaxial Growth KineticsMolecular Beam Epitaxy KineticsSilicon ChemistrySilicon EpitaxySilicon Surface ScienceSticking ProbabilitySurface Growth
Time-of-flight direct recoiling (DR) measurements of surface hydrogen coverage (θH) are made in situ during chemical beam epitaxy growth of Si from Si2H6 on Si(100) as a function of temperature and disilane flux. Temperatures (T) of 300–900 °C and fluxes from 1015 to 1017 molecules cm−2 s−1 are used. Limited data for SiH4 are also presented. Predictions of θH from a steady state kinetic model are compared with the measurements, enabling the reactive sticking probability (S) of Si2H6 to be estimated at T≳500 °C.
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Structure of the H-saturated Si(100) surface
John J. Boland · Physical Review Letters · 1990 · 304 citations