Optical properties of very narrow GaInAs/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy

Abstract

Single and multiple GaInAs/InP quantum well structures with well widths of 0.5–20 nm have been grown by metalorganic vapor phase epitaxy at 20 mbar using TMG, TMI, PH3, and AsH3. Low-temperature (2 K) photoluminescence and transmission electron microscopy were used to characterize the structures obtained for various growth conditions. For the optimized deposition process the interfacial roughness amounts to less than one monolayer. The narrowest exciton linewidth obtained for a 20-nm well was 2.2 meV; the largest energy shift was observed for a 0.5-nm well and amounted to 528 meV.