Journal of Applied Physics · 1963 · 51 citations · 5 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesOptical Properties Of SemiconductorsSemiconductor PhysicsThermal Properties Of SemiconductorsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapHigh-temperature Device OperationHigh-temperature Thermal PropertiesOptical Band GapTemperature DependenceTemperature Dependence Of DiodesTemperature EffectsThermal Effects In Photonic Devices
The radiation output of GaAs coherent diodes has been studied for temperatures between 4° and 125°K. The coherent output follows the temperature variation of the band gap of pure GaAs. The threshold current follows no simple temperature dependence. It rises exponentially for temperatures below 30°K with the slope 0.9%/°K and seems to vary as T3 for T above 100°K. The temperature variation of the cavity modes is calculated, and agrees with experiment to within 5%. These results are briefly discussed in terms of a band-to-band model for the radiation.
5
Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
M. D. Sturge · Physical Review · 1962 · 1.1K citations
Coherent Light Emission From GaAs Junctions
R. N. Hall, G. E. Fenner, J. D. Kingsley et al. · Physical Review Letters · 1962 · 974 citations · Full text
T.M. Quist, R. H. Rediker, R. J. Keyes et al. · Applied Physics Letters · 1962 · 497 citations
Engineering, Electrical Engineering, Condensed Matter Physics +4