Nonlocal magnetoresistance due to Lorentz force in linear transport region in bulk silicon

Abstract

Magnetoresistance (MR) of lightly doped bulk silicon has been studied in linear transport region. Both nonlocal and local MR results from deflection of in-plane transport of carriers by Lorentz force. However, nonlocal MR is nearly one order of magnitude larger than local one. We ascribe the enhanced nonlocal MR to polarity-conserved charges accumulated on boundaries near anode and cathode, which alters potential distribution and meanwhile increases current flowing in nonlocal region. This mechanism of nonlocal MR can be generalized to other materials with high or moderate mobility.