Phase‐Selective CVD of Vanadium Oxide Nanostructures

Abstract

Abstract Phase‐selective synthesis of crystalline vanadium oxides is achieved by the CVD of vanadium oxo‐tri‐isopropoxide [VO(O i Pr) 3 ]. Preformed V–O and V=O units and their differential thermal stability present in the precursor enabled precise modulation of the vanadium/oxygen stoichiometry in the products of the CVD. No additional oxygen carrier is employed during the deposition processes. Subject to deposition temperature (400–700 °C), different phase compositions (V 2 O 5 , V 7 O 13 , and VO 2 ) are directly obtained and are investigated regarding structural and electrical properties. Hall measurements on VO 2 films show a sharp metal‐to‐semiconductor transition at 78 °C (single crystal, 68 °C) depending on their microstructure formed by an oriented aggregation of individual crystallites.