Preparation of BaTiO₃ Thin Films by Metalorganic Chemical Vapor Deposition Using Ultrasonic Spraying

Abstract

Ferroelectric BaTiO 3 thin films were fabricated by metalorganic chemical vapor deposition (MOCVD) at atmospheric pressure. The ultrasonic spraying technique has been used to carry the source materials. The common solutions of barium-diethylhexanoate and diisopropoxy-titanium-bis-acetylacetonate in n-butanol were used as the starting materials. Since the concentration of sources can be controlled in the common solution, this method is more simple and precise than other CVD processes. The films had (110) preferred orientation with increasing temperature. The dielectric constant ( ε ) and the loss factor (tan δ) of thin film deposited at 550° C were about 250 and 0.1, respectively. The leakage current density was 10 -5 A/cm 2 at 0.1 MV/cm.