IEEE Journal of Quantum Electronics · 1981 · 75 citations · 27 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsInfrared DetectorsOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsAvalanche GainAvalanche Photodiode DetectorsAvalanche PhotodiodesEpitaxial MaterialsLiquid Phase EpitaxyPhotodetector MaterialsQuantum EfficiencySemiconductor Infrared Materials
GaAlAsSb quaternary alloys and GaAlSb ternary alloys have been grown by liquid phase epitaxy (LPE) at 550°C and 450°C, respectively. The material compositions and epitaxial structures are suitable for fabricating photodiodes sensitive in the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1.0-1.8 \mu</tex> m wavelength range. Various avalanche photodiode structures fabricated in these materials are discussed. The ion implanted GaAlAsSb APD's exhibit a high gain of 100, 82 percent quantum efficiency, and a FWHM of 400 ps. The heterojunction GaAlAsSb APD's have a gain of 40, 92 percent quantum efficiency, and a FWTM of 150 ps. The only remaining material problem which limits the performance of these devices is the high-surface leakage current.
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Electroreflectance at a Semiconductor-Electrolyte Interface
M. Cardona, K. L. Shaklee, Fred H. Pollak · Physical Review · 1967 · 779 citations
Ultimate low-loss single-mode fibre at 1.55 μm
T. Miya, Y. Terunuma, T. Hosaka et al. · Electronics Letters · 1979 · 633 citations
Ionization Rates of Holes and Electrons in Silicon
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