IEEE Transactions on Microwave Theory and Techniques · 1982 · 25 citations · 2 references
Low-power ElectronicsElectrical EngineeringEngineeringRf SemiconductorPower DeviceHigh-frequency DeviceElectronic EngineeringP-i-n DiodesRouting SwitchPower Semiconductor DeviceHarmonic DistortionDiode LifetimePower ElectronicsMicroelectronics
The development of high-power low-frequency diodes, conditions for their operation, and results measured in actual circuits are described. Harmonic distortion at 500 kHz and 2 MHz has been found to decrease with increasing diode lifetime and forward-bias current. Large reverse bias voltages are necessary at low frequencies to keep the RF voltage swing from penetrating the forward conduction region. The improvement of p-i-n diode lifetimes with thicker I-layers or with planar construction has been studied and the performance of these diodes in a routing switch is reported.
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