Publication | Closed Access
33.1: Channel‐Etched C‐Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring
12
Citations
5
References
2014
Year
Materials ScienceSemiconductor TechnologyElectrical EngineeringCu WiringEngineeringCrystalline Oxide SemiconductorApplied PhysicsSemiconductor MaterialSemiconductor Device FabricationIntegrated CircuitsLittle CuMicroelectronicsInterconnect (Integrated Circuits)Semiconductor Device
Abstract A channel‐etched IGZO field‐effect transistor (FET) using Cu wiring was fabricated. Because little Cu is diffused into a c‐axis aligned crystalline oxide semiconductor (CAAC‐OS), which is c‐axis aligned crystalline IGZO, the use of the CAAC‐OS provides favorable characteristics for a channel‐etched FET.
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