Applied Physics Letters · 1993 · 42 citations · 11 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsMicroelectronicsSemiconductor DevicesCarrier TransportMetal-semiconductor ContactsQuantum ConfinementSemiconductor HeterostructuresSemiconductor PhysicsAharonov-bohm EffectBallistic TransportChannelsElectronic TransportHeterostructure DevicesQuantum TransportQuantum Transport EffectsTransport In Heterostructures
We have developed a new technique to contact a submicrometer metal dot gate independently of surrounding gates. With this we have made two ballistic channels in parallel on a GaAs-AlGaAs heterostructure. Independent control over all the gates allows unprecedented flexibility to adjust both the size of the dot and the widths of the channels. In a perpendicular magnetic field we can obtain extremely large Aharonov–Bohm oscillations and a double-frequency oscillation indicative of edge state charging in an open system. At low magnetic fields we see no evidence for any interaction between the one-dimensional subbands in the two channels.
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Quantized conductance of point contacts in a two-dimensional electron gas
B. J. van Wees, H. van Houten, C. W. J. Beenakker et al. · Physical Review Letters · 1988 · 3.1K citations · Full text
One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction
T. J. Thornton, M. Pepper, H. Ahmed et al. · Physical Review Letters · 1986 · 636 citations
Electrostatically defined heterojunction rings and the Aharonov–Bohm effect
C. J. B. Ford, T. J. Thornton, R. Newbury et al. · Applied Physics Letters · 1989 · 103 citations