The integrated intensities of the Laue-diffracted X-rays for monocrystals containing macroscopically homogeneously distributed defects

Abstract

A strict dynamical theory of radiation scattering in defect crystals is developed involving no arbitrary assumptions. Final theoretical expressions are obtained for the case of Laue-diffraction in monocrystals containing homogeneously distributed defects, in particular Coulomb-like defects (clusters, dislocation loops). The theory gives an unified description of the thickness dependences of intensity scattering both, for thin and thick crystals, and predicts an effect of anomalous transmission of diffuse background in thick crystals. Experimental investigations on O- or Cu-doped Si-monocrystals are carried out which confirms the theory. [Russian Text Ignored].