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Dimensional effects on current and field properties in NbN films
50
Citations
13
References
1981
Year
Materials ScienceMaterial AnalysisEngineeringPhysicsMaterials CharacterizationApplied PhysicsCondensed Matter PhysicsSurface ScienceNbn FilmsLow-dimensional SystemSemiconductor MaterialMaterial PerformanceThin Film Process TechnologyReactive SputteringThin FilmsGrain SizeElectrical PropertyThin Film Processing
We have investigated dimensional effects, i.e., variations in thickness, width, grain size, and separation between grains, on the current and field properties of NbN films. The films, all of which had T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> 's of ∼ 16K were prepared by reactive sputtering, Self-field current densities measured at 4.2K ranged from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\sim 5 \times 10^{5}</tex> to > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> Amps/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Measured upper critical fields at 4.2K varied from < 100 kG to > 220 kG. Extrapolated H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c2</inf> 's of over 500 kG were calculated from data taken near T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> . All of these results are correlated with transmission electron microscopy studies. The very highest upper critical fields are attributed to an H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c3</inf> arising from a column-void microstructure. In general, we conclude that dimensional effects are a dominant factor in achieving the very high current and field values observed in these films.
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