High resolution x-ray photoemission spectroscopy studies of thin SiO2 and Si/SiO2 interfaces

Abstract

The important results for the control of the SiO2/Si interface structure in atomic scale have been obtained recently. In the present article the structural imperfections in the ultrathin oxide, which cannot be determined uniquely by x-ray photoemission spectroscopy, in addition to the early stage of interface formation are discussed. The Si 2p photoelectron spectra arising from Si–Si bonds in the oxide near the interface were confirmed from the measurement of reflectance in vacuum ultraviolet. The Si 2p photoelectron spectra arising from Si–H bonds in the oxide were confirmed by multiple internal reflection infrared absorption spectroscopy.