Hole space-charge buildup and evidence for sequential tunneling in <i>p</i>-type double-barrier resonant tunneling devices

Abstract

Magnetoquantum oscillations in the tunnel current of a p-type double-barrier AlAs/GaAs/AlAs device are used to measure the buildup of hole space charge in the quantum well over a wide range of bias. These measurements demonstrate sequential tunneling of holes. The effective mass for hole tunneling is estimated.