SID Symposium Digest of Technical Papers · 2005 · 51 citations · 2 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyGate Drive CircuitsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesGallium Nitride Gate DriversGate Drive Circuit ReliabilityGate Driver DesignHigh-temperature Device Operation
Abstract This is the first report on real XGA AMLCD for NBPC with highly stable integrated gate driver circuits using a‐Si TFT. The new circuit has been designed with dual‐pull down structure for high reliability and has been working for over 2,000 hours at 60°C, which is sufficient working time for normal driving conditions.
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