Large enhancement of spin polarization observed by photoelectrons from a strained GaAs layer

GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications

Sadao Adachi · Journal of Applied Physics · 1985 · 3.3K citations

Engineering, Materials Engineering, Materials Science +17

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

Natural Sciences, Materials Engineering, Materials Science +14

Heterostructure Lasers

H. C. Casey, M. B. Panish, T. A. Roth · Journal of The Electrochemical Society · 1979 · 1.7K citations

Engineering, Electrical Engineering, Materials Science +17

Photoemission of spin-polarized electrons from GaAs

D. T. Pierce, F. Meier · Physical review. B, Solid state · 1976 · 527 citations

Natural Sciences, Materials Science, Physics +12

Energy band-gap shift with elastic strain in Ga<i>x</i>In1−<i>x</i>P epitaxial layers on (001) GaAs substrates

Hiromitsu Asai, Kunishige Oe · Journal of Applied Physics · 1983 · 367 citations

Natural Sciences, Materials Science, Physics +17