Rare Metals · 2013 · 10 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsOptoelectronicsDopingLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsPhotoluminescenceRare-earth-doped Luminescent MaterialsRare-earth-doped Thin Films
Abstract Y 0.95− x Eu 0.05 VO 4 : x Bi 3+ ( x = 0, 0.02, 0.04, 0.06, 0.08, and 0.10 mol) six photoluminescence films were deposited on glass substrates by sol–gel spin‐coating method. Their morphology and optical property were investigated. The micrographs for the six samples have no change with Bi 3+ doping. The emission spectra result shows that a dominant red emission peak at 620 nm, which is due to the Eu 3+ electric dipole transition of 5 D 0 → 7 F 2 , is observed under excitation wavelengths 254 nm. Furthermore, with the content of Bi 3+ increasing from 0 to 0.08 mol, the emission intensity of samples strengthens and reaches a maximum at x = 0.08 mol, then decreases with the doping content to 0.10 mol.
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