An attempt to design long-wavelength (>2 μm) InP-based GaInNAs diode lasers

Abstract

In the present paper, anticipated performance characteristics of various InP-based GaInNAs quantum-well (QW) active regions are determined with the aid of our comprehensive computer model for various sets of parameters (temperature, carrier concentration, QW thickness). It is evident from this analysis that the compressively strained InPbased Ga 0.12 In 0.88 N 0.02 As 0.98 /Ga 0.275 In 0.725 As 0.6 P 0.4 QW structure may offer expected lasing emission. Its maximal optical gain of over 2150 cm -1 has been determined at room temperature for the wavelength of about 2815 nm for the QW thickness of 10 nm and the carrier concentration of 5 10 18 cm -3 . Therefore, the above InP-based QW structure may be successfully applied in compact semiconductor laser sources of the desired radiation of wavelengths longer at room temperature than even 2800 nm. Similar GaAs-based devices emit radiation of distinctly shorter wavelengths, whereas GaSb-based ones avail themselves of more expensive substrates as well as exhibit lower thermal conductivities and worse carrier confinements.