Inverted bottom‐emission organic light emitting diodes using MoO₃ for both hole and electron injections

Abstract

Abstract Inverted bottom‐emission organic light emitting diodes (IBOLEDs) using MoO 3 for both hole and electron injections were fabricated. The IBOLED using 10 nm MoO 3 for hole injection and 5 nm MoO 3 /5 nm Li 2 CO 3 doped bathocuproine (Li 2 CO 3 :BCP, 1:4 in mass) for electron injection showed nearly same I – V characteristics as the reference device utilizing 10 nm MoO 3 for hole injection and 10 nm 1:4 Li 2 CO 3 :BCP for electron injection, whereas, the former device provided increased current efficiencies than the latter device, as a result of the relieved diffusion of n‐typed dopant into the emissive layer in the former device. We provide an efficient, low‐cost alternative to realizing the electron injection in IBOLEDs.