Spectral analysis of InGaAs/GaAs quantum-dot lasers

Abstract

The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100–400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate.