Physical Review Letters · 1988 · 186 citations · 13 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsQuantum Hall PhysicsQuantum TunnelingSemiconductor PhysicsBackscattering EffectsFour-point Probe MeasurementHall Conductance QuantizationHall EffectHall Effect MeasurementsQuantum WiresTwo-dimensional Electron GasesTwo-dimensional Electron Systems
The quantized Hall effect comprises edge states flowing in opposite directions on opposite edges of a two-dimensional electron gas. In a narrow wire, the presence of a potential barrier in the wire can cause the state to be reflected back into the oppositely directed state at the outer edge of the sample. Experiments on narrow (\ensuremath{\sim}1 \ensuremath{\mu}m) $\mathrm{GaAs}\ensuremath{-}{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ wires with short cross gates confirm that backscattering is caused by the barrier drawn up by the gate. The barrier, by reflecting some fraction of the states, causes quantized plateaus in any four-probe measurement of resistance.
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Quantum transport in an electron-wave guide
G. Timp, A. M. Chang, P. M. Mankiewich et al. · Physical Review Letters · 1987 · 272 citations