Publication | Closed Access
AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy
19
Citations
2
References
1986
Year
Materials EngineeringAluminium NitrideElectrical EngineeringFirst Algaas/ingaas/gaas HbtsEngineeringMisfit DislocationsPhysicsRf SemiconductorApplied PhysicsGood I/v CharacteristicsMolecular Beam EpitaxyMicroelectronicsCategoryiii-v Semiconductor
The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.
| Year | Citations | |
|---|---|---|
Page 1
Page 1