Ultrahigh Photoresponse of Few‐Layer TiS₃ Nanoribbon Transistors

Abstract

TiS3 nanoribbons with thickness down to 15 nm are isolated by viscoelastic mechanical exfoliation. Field-effect transistors are fabricated and their electrical characteristics are studied in the dark state and upon illumination. An ultrahigh photoresponse up to 3000 A/W, a bandgap of 1 eV, and response times of about 4 ms are found making TiS3 a state-of-the-art material in photodetection. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.