Physical Review Letters · 1975 · 274 citations · 13 references
Natural SciencesChemistryMaterials ScienceInterface SciencePhysical ChemistrySemiconductor MaterialsChemical BondingInterface ModelingInterface PhysicsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesAtomic BondingBarrier HeightsBondingInterface StatesMetal-semiconductor InterfacesSilicon InterfacesThin Oxide LayersTransition Metal Bonding
New results and new microscopic models are presented to describe chemical trends in barrier heights at transition-metal-silicide-silicon interfaces and at nontransition-metal-silicon interfaces, where in the latter case a very thin oxide is present.
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