Publication | Closed Access
Energy band gaps of HgxCdyMnzTe (x +y +z = 1) epitaxial layers
36
Citations
11
References
1981
Year
Reflection CoefficientEngineeringAbsorption SpectroscopyEpitaxial LayersIi-vi SemiconductorOptical PropertiesMolecular Beam EpitaxyEpitaxial GrowthEpitaxial Hgxcdymnzte LayersMaterials SciencePhysicsAbsorption EdgeQuantum ChemistryEnergy Band GapsLayered MaterialCrystallographyNatural SciencesSpectroscopyApplied PhysicsCondensed Matter PhysicsLight AbsorptionTopological Heterostructures
A method of preparation and the results of investigation of the absorption edge and the reflection coefficient for epitaxial HgxCdyMnzTe layers are presented. A comparison of the calculated inter-band transition energies with experimental values is performed. Die Präparationsmethode und zur Ergebnisse experimentelle Absorptionskante und des Reflexionskoeffizienten für epitaktische HgxCdyMnzTe-Schichten werden mitgeteilt. Die berechneten Interband-Übergangsenergien werden mit experimentellen Werten verglichen.
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