Electronics Letters · 1976 · 64 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsGaas Microwave Integrated CircuitsGainGallium ArsenideGallium Arsenide Field-effect TransistorsGallium Arsenide Microwave AmplifiersMicrowave DevicesMonolithic Microwave Integrated CircuitsWideband Amplifiers
A unique monolithic X-band f.e.t. amplifier is described. Wideband matching circuits, using lumped elements, are integrated with the transistor on semi-insulating gallium arsenide to produce an amplifier chip 1.8×1.2 mm. Gains in excess of 4.5 dB over 7.5 to 11.5 GHz have been measured. The chip has been installed into a low-parasitic package to produce a gain module suitable for the microwave engineer.
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Proceedings of the 36th European Microwave Conference
2006 · 363 citations