Growth and characterization of a delta-function doping layer in Si

Abstract

We present a procedure whereby a sheet of donor atoms is incorporated in (100) Si during molecular beam epitaxial growth. Analysis by secondary ion mass spectroscopy and transmission electron microscopy shows that the width of such δ-function doping layers is only a few lattice planes. Tunneling spectroscopy and transport measurements give evidence for quantum confinement of the electronic charge in the layer and thus confirm the narrow width.