Resistivity and annealing properties of implanted Si:H⁺

Abstract

Abstract N- or p-type 1 ohm-cm resistivity silicon crystals are bombarded with 1 MeV protons to doses greater than 1015 H+/cm2. The crystals are characterized through X-ray topography and surface and in-depth resistivity measurement techniques. Post-bombardment measurements indicate a high resistance layer (104 ohm-cm range on the silicon surface, extending to 16μm depth after 1 MeV H+ bombardment. Post-anneal results show that this insulating layer is still stable after 300 °C anneal cycles. At higher anneal temperatures the radiation damage starts to anneal out and at 800 °C the crystal returns to its original resistivity.