A contribution to the study of the influence of impurities on the growth and some physical properties of TGS single crystals

Abstract

Abstract Single crystals of TGS doped with Ni 2+ , Cu 2+ and Fe 3+ have been prepared under identical conditions by the method of temperature decrease (below the phase transition point). Presentation of the influence of impurities on the development of individual crystal faces is based on goniometric measurements. The influence of impurities on the domain structure of TGS is documented by microphotographs of domain structures and by investigation of the variation with time of the average domain width. It is shown that the distribution of impurities (between the liquid and solid phases) is approximately proportional to the concentrations of metal glycino chelates in the solution. From the results concerning the influence of impurities on various physical properties follows that the degree to which the properties are affected depends not only on the impurity concentration but also on the specific intensity of their action which is due to variations in the binding forces in the structure of TGS.