Rectification properties of layered boron nitride films on silicon

Abstract

Cubic boron nitride (c-BN)/turbostratic boron nitride (t-BN) layered films were deposited on n-type Si substrates, and their rectification properties were investigated. Rectification in a typical n-type/p-type diode was observed in the current–voltage characteristics of c-BN film with a thin t-BN initial layer. However, the rectification polarity was inverted in the double-layered film with thick t-BN, where conduction was found to be caused by Schottky and Frenkel–Poole emission conduction mechanisms, depending on the range of bias applied. In the case of a thick t-BN single-layered film, the Frenkel–Poole emission conduction mechanism governed the conduction.