Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates

Abstract

A study of the carrier dynamics of self-assembled InAs quantum dot structures on InP (311)B substrates is presented. By time-resolved photoluminescence spectroscopy, an efficient carrier capture from the wetting layer into the quantum dots is observed under high incident excitation condition. This behavior can be attributed to carrier relaxation assisted by the Auger effect. Moreover, first excited states which have a fast decay time of ∼60 ps are observed under the same condition. These results demonstrate the possibility of the realization of performance-improved injection lasers at 1.55 μm for optical telecommunication.