Proton bombarded GaAlAs:GaAs light emitting diodes

J. Heinen, H. Westermeier, W. Harth, K.‐H. Zschauer

IEEE Transactions on Electron Devices · 1976 · 11 citations · 1 references

Concepts

Abstract

High-speed high-radiance luminescent diodes for optical transmission systems have been fabricated. Proton bombardment is used for confining the area of the active region. Modulation cutoff frequencies of 170 MHz and a radiance of 11 W/ sr. cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a diode current of 100 mA have been measured.

References

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