Physical review. B, Condensed matter · 1993 · 20 citations · 14 references
Natural SciencesChemistryMaterials SciencePhysical ChemistrySpectroscopyThin FilmsMetalsPhotoelectron SpectroscopySurface PhysicsThin-film MaterialsTransition Metal ChemistryX-ray Photoelectron SpectroscopyCeramic Thin FilmsFilm Growth MechanismsMixed-valence ComplexesMixed-valence Semiconductor BehaviorThin-film Growth Mechanisms
We report x-ray photoemission spectroscopy studies of the growth of ultrathin (0.1--5 monolayers) cerium films on polycrystalline rhenium, iridium, and platinum substrates. Our data indicate that Ce grows on Re without intermixing or compound formation, that on Pt reaction (i.e., compound formation) as well as interdiffusion is strong, while on Ir compound formation occurs but interdiffusion is weaker than for Pt. At low coverages the Ce has identical 3d binding energy and is trivalent for all three substrates and there appears to be a threshold for the onset of mixed-valence behavior.
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Electronic structure of Ce and its intermetallic compounds
J. C. Fuggle, F. U. Hillebrecht, Z. Żołnierek et al. · Physical review. B, Condensed matter · 1983 · 472 citations
Electronic structure of cerium and light rare-earth intermetallics
J. W. Allen, S.-J. Oh, O. Gunnarsson et al. · Advances In Physics · 1986 · 407 citations
Volker Heine · Physics Bulletin · 1981 · 332 citations
Theory of surface stress and surface reconstruction
R. J. Needs, M. J. Godfrey, Marc L. Mansfield · Surface Science · 1991 · 172 citations