Applied Physics Letters · 2010 · 22 citations · 19 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesElectronic Excited StatesQuantum DotsQuantum DynamicsQuantum WellsSemiconductor PhysicsUltrafast OpticsAmplified Spontaneous EmissionExcited-state RelaxationGround State PropertiesNonlinear AmplificationQuantum Dot PhotophysicsSemiconductor Optical AmplifiersSemiconductor Quantum DotsSpontaneous Emission
In time-resolved experiments at InGaAs/GaAs quantum-dots-in-a-well (DWELL) semiconductor optical amplifiers, pump-probe of the ground state (GS) population, and complementary measurement of the amplified spontaneous emission of the excited state (ES) population, we are able to separate the early subpicosecond dephasing dynamics from the later picosecond population relaxation dynamics. We observe a 10 ps delay between the nonlinear GS pulse amplification and the subsequent ES population drop-off that supports the dominance of a direct two dimensional reservoir-GS capture relaxation path in electrically pumped quantum-dot-DWELL structures.
19
Mitsuru Ishida, Nobuaki Hatori, T. Akiyama et al. · Applied Physics Letters · 2004 · 91 citations
Excited-state gain dynamics in InGaAs quantum-dot amplifiers
S. Schneider, Paola Borri, W. Langbein et al. · IEEE Photonics Technology Letters · 2005 · 85 citations