Materials science forum · 2000 · 20 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefect CharacterizationDefects In Electronic MaterialsDislocations In SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor HeterostructuresDefect Recombination CentersRecombination Center FormationRecombination CentersSchottky Barrier DiodesScrew Dislocation GrowthScrew DislocationsSilicon Carbide (Sic) MaterialsX-ray Topography
We show the first direct experimental correlation between the presence of closed core screw dislocations in 6H-SiC epilayers with recombination centers, as well as with some of the small growth pits on the epilayer surface in lightly-doped 6H-SiC Schottky diodes. At every Synchrotron White-Beam X-ray Topography (SWBXT)-identified closed core screw dislocation, an Electron Beam Induced Current (EBIC) image showed a dark spot indicating a recombination center, and Nomarski optical microscope and Atomic Force Microscope (AFM) images showed a corresponding small growth pit with a sharp apex on the surface of the epilayer.