Enhancement in emission current from dry-processed <i>n</i>-type Si field emitter arrays after tip anodization

Abstract

n-type porous Si field emitter arrays (FEAs) have been fabricated by tip surface anodization to improve the emission characteristics. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler-Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tips could be decreased and the emission from various FEAs with initially different characteristics could be homogeneously improved by tip surface anodization.