High‐Mobility Field‐Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers

Hsin‐Rong Tseng, Hung Phan, Chan Luo, Ming Wang, Louis A. Pérez, Shrayesh N. Patel, Lei Ying, Edward J. Kramer, Thuc‐Quyen Nguyen, Guillermo C. Bazan,

Advanced Materials · 2014 · 568 citations · 32 references

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Abstract

A record high OFET hole mobility, as high as 23.7 cm2/Vs, is achieved in macroscopic aligned semiconducting polymers. The high mobility is insensitive to the polymer molecular weight. Polymer chains are aligned along the fiber to facilitate intrachain charge transport. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.

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