Tilted angle ion implantation

Abstract

Abstract Both horizontal and vertical depth profiles of implanted particles, and the spatial distribution of vacancies and ionization created by them was studied as a function of the implantation angle by means of the binary collision computer code TRIM, for a frequently examined system (100 keV boron in silicon). These predictions were checked experimentally by means of a special nuclear reaction technique with thermal neutrons. In spite of general agreement, some deviations are found for the 2nd and 4th moments.