F.C. Zawislak - Concepedia

Author

F.C. Zawislak

Universidade Federal do Rio Grande do Sul

Also Known As

F C Zawislak, F Zawislak, F. C. ZAWISLAK, F. C. Zawislak, F. Zawislak, F.C Zawislak, F.C. Zawislak, Fernando C. Zawislak, Fernando Zawislak, Zawislak, Fernando Claudio

178

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

Universidade Federal do Rio Grande do Sul Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute California Institute of Technology Max Planck Institute for Chemistry Universidade Federal do Paraná

About

F.C. Zawislak is an author at Universidade Federal do Rio Grande do Sul specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	52	1.3K
2	Applied Physics	22	46	1.2K
3	Natural Sciences	12	15	294
4	Education	2	2	27
5	Health Sciences	2	2	46

F.C. Zawislak

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Hard and sp2-rich amorphous carbon structure formed by ion beam irradiation of fullerene, a-C and polymeric a-C:H films Daniel L. Baptista, F.C. Zawislak Diamond and Related Materials Materials SciencePolymeric A-cEngineeringCarbon-based MaterialNanoelectronics	2004	86
Distributions of light ions and foil destruction after irradiation of organic polymers D. Fink, J.P. Biersack, J. T. Chen, Journal of Applied Physics EngineeringRadiation Materials ScienceImplantation BehaviorRadiation EffectRadiation Exposure	1985	76
Range parameters study of medium-heavy ions implanted into light substrates P. L. Grande, F.C. Zawislak, D. Fink, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationOptical MaterialsEngineeringOptical Properties	1991	60
Ranges in Si and lighter mono and multi-element targets M. Behar, P.F.P. Fichtner, P. L. Grande, Materials Science and Engineering R Reports PhysicsLighter MonoTarget FabricationInstrumentationSilicon On Insulator	1995	53
Range profiles of implanted Bi and Au in amorphous silicon M. Behar, P.F.P. Fichtner, C. A. Olivieri, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceElectrical EngineeringEngineeringApplied PhysicsRange Profiles	1985	51
Cluster coarsening and luminescence emission intensity of Ge nanoclusters in SiO2 layers J. M. J. Lopes, F.C. Zawislak, M. Behar, Journal of Applied Physics EngineeringLuminescence Emission IntensityNanoclusterLayers 180Sio2 Layers	2003	45
Non-regular depth profiles of light ions implanted into organic polymer films D. Fink, Martin Müller, U. Stettner, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceEngineeringNon-regular Depth ProfilesOrganic ElectronicsOptical Properties	1988	41
Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon P.F.P. Fichtner, M. Behar, C. A. Olivieri, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringApplied PhysicsRange Profiles	1987	37
Range profiles of medium and heavy ions implanted into SiO2 P. L. Grande, P.F.P. Fichtner, M. Behar, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringSurface ScienceApplied Physics	1988	34
Range and thermal-behavior studies of Au and Bi implanted into photoresist films M. Behar, P. L. Grande, L. Amaral, Physical review. B, Condensed matter EngineeringMaterial InnovationIon ImplantationOptical PropertiesIon Beam	1990	34

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