Investigation of 4H-SiC MOS capacitors annealed in diluted N2O at different temperatures - Concepedia

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Investigation of 4H-SiC MOS capacitors annealed in diluted N2O at different temperatures

27

Citations

9

References

2005

Year

Peng Zhao, Rusli Rusli, Y. Liu, C. C. Tin, Weiguang Zhu, J. Ahn

Microelectronic Engineering

Materials ScienceDifferent TemperaturesElectrical EngineeringEngineeringOxide ElectronicsBias Temperature InstabilityApplied Physics4H-sic Mos CapacitorsDiluted N2oCarbide

References

	Year	Citations

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