Publication | Closed Access
Tunneling images of biatomic steps on Si(001)
162
Citations
14
References
1987
Year
EngineeringStraight Double StepsPhysicsTunneling MicroscopySurface ScienceApplied PhysicsCondensed Matter PhysicsSiliceneBiatomic StepsSemiconductor Device FabricationBi- Atomic StepsSilicon On InsulatorMicroelectronicsVicinal SiSurface Reconstruction
Tunneling images of vicinal Si(001) tilted 4\ifmmode^\circ\else\textdegree\fi{} about the [11\ifmmode\bar\else\textasciimacron\fi{}0] direction have been obtained. Straight double steps running along the [11\ifmmode\bar\else\textasciimacron\fi{}0] direction, separated by terraces of relatively uniform width, dominate the topography of the surface. The structure of the bi- atomic steps is best described by a model that involves a rebonded geometry with buckling.
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