Light-ion-bombarded <i>p</i>-type In0.53Ga0.47As

Abstract

Multiple-energy H-, He-, and B-ion bombardments were performed to obtain uniform high resistivity over the entire thickness of p-type In0.53Ga0.47As. High resistivity, 580 Ω cm, which is close to the intrinsic resistivity limit of ≊103 Ω cm in InGaAs, is observed. The thermal stability of the high-resistance layers depended upon the mass of the implanted ion. The B-ion-implanted layers maintained high resistivity up to ≊200 °C. Photoluminesence measurements were used to obtain the energy of compensating levels produced by light-ion bombardment.