2010 IEEE MTT-S International Microwave Symposium · 2010 · 45 citations · 6 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesModulationPower AmplifiersRadio-frequency Integrated CircuitsWide-bandgap Semiconductor DevicesEfficiencyGallium Nitride Power AmplifiersHigh-efficiency Power AmplifiersPower Amplifier DesignPower OutputRadio Frequency Power Amplifiers
This paper reports recent results on a current-mode class-S power amplifier for the 450 MHz band, based on GaN-HEMT MMICs. We achieve a peak output power of 8.7 W for a single tone at 420 MHz, encoded in standard band-pass delta-sigma modulation with 1.68 Gbps sampling frequency. The respective efficiency is 34%. We find that these values strongly vary with coding efficiency of the modulation and reach 19 W with 59% for square-wave excitation. In order to clarify the potential of the PA in more detail, the S-class characteristics at power back-off and with varying oversampling ratio are presented as well.
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