Metastable defects in GaAs grown by metalorganic chemical vapor deposition: Dependence on the V/III ratio

Abstract

Metastable defects in GaAs samples grown by metalorganic chemical vapor deposition were analyzed as a function of arsine to trimethylgalium ratio, using deep-level transient spectroscopy and isochronal annealing. The data have shown that metastability is related to the presence of an electron level 0.33 eV below the conduction band which is independent on the As/Ga ratio. Arsenic interstitials could be responsible for this level.