M. A. A. Pudensi - Concepedia

Author

M. A. A. Pudensi

Universidade Estadual de Campinas (UNICAMP)

Also Known As

M. A. A. Pudensi, M. A. Pudensi, M.A.A. Pudensi, Marcio A. A. Pudensi

Publications

609

Citations

H-Index

Concepts

All Affiliations

Universidade Estadual de Campinas (UNICAMP)Queens College, CUNY Universidade de São Paulo University of California, Santa Barbara IBM (United States)

About

M. A. A. Pudensi is an author at Universidade Estadual de Campinas (UNICAMP) specializing in engineering, applied physics, and optical properties.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	545
2	Applied Physics	11	12	513
3	Electrical Engineering	3	3	182
4	Chemistry	2	2	108
5	Natural Sciences	1	1	18

M. A. A. Pudensi

Publications

587

Citations

H-Index

Page 1

	Year	Citations
Growth of AlxGa1−<i>x</i>As parabolic quantum wells by real-time feedback control of composition D. E. Aspnes, W. E. Quinn, M. C. Tamargo, Applied Physics Letters Aluminium NitrideOptical MaterialsEngineeringReal-time Feedback ControlSemiconductor Nanostructures	1992	111
New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface Yourong Yuan, M. A. A. Pudensi, G.A. Vawter, Journal of Applied Physics EngineeringBound ExcitonLuminescence PropertyOptical PropertiesAlgaas/gaas Heterojunction Interface	1985	98
Studies of surface and interface segregation in polymer blends by secondary ion mass spectrometry S. A. Schwarz, B. J. Wilkens, M. A. A. Pudensi, Molecular Physics EngineeringChemistrySoft MatterAnalytical ChemistrySurface Segregation Profiles	1992	90
Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions Yourong Yuan, K. Mohammed, M. A. A. Pudensi, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringPhotoluminescenceEngineering	1984	68
Configuration of grafted polystyrene chains in the melt: Temperature and concentration dependence Xiaolin Zhao, Wei Zhao, Xiaobing Zheng, Physical Review Letters	1992	42
Optically monitoring and controlling epitaxial growth D. E. Aspnes, R. Bhat, C. Caneau, Journal of Crystal Growth PhotonicsOptical MaterialsEngineeringOptical PropertiesOptical Testing	1992	40
Method to calculate the reflection and transmission of guided waves M. A. A. Pudensi, Luiz G. Ferreira Journal of the Optical Society of America Electromagnetic WavePhotonicsWaveguidesEngineeringWave Optic	1982	32
Evidence for heavy ion channeling in AlGaAs at low energies N. G. Stoffel, S. A. Schwarz, M. A. A. Pudensi, Applied Physics Letters SemiconductorsIon ImplantationEngineeringPhysicsCrystalline Defects	1992	19
Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP S. A. Schwarz, M. A. A. Pudensi, T. Sands, Applied Physics Letters EngineeringChemistryChemical DepositionGe/pd Ohmic ContactsAnalytical Instrumentation	1992	18
Metastable defects in GaAs grown by metalorganic chemical vapor deposition: Dependence on the V/III ratio Akimori Tabata, M. A. A. Pudensi, Aldionso Marques Machado Journal of Applied Physics SemiconductorsDeep-level Transient SpectroscopyElectrical EngineeringEpitaxial GrowthEngineering	1989	16

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