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Small Signal Parameters Extraction for Silicon MOS Transistors
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2000
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Device ModelingSilicon Mos TransistorsElectrical EngineeringEngineeringPhysicsElectronic EngineeringMixed-signal Integrated CircuitApplied PhysicsMos TransistorsSoi SubstrateBias Temperature InstabilityMicroelectronicsNew Extraction ProcedureSignal ProcessingSemiconductor Device
We present in this paper a new extraction procedure for MOS transistors. We deal mainly with extrinsic parameters determination, straightforwardly obtained from S-parameters measurements at cold biases (Vds = OV). We apply our procedure to a MOSFET implemented on SOI substrate.