High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates

Abstract

We report the fabrication of violet InGaN/GaN light-emitting diodes (LEDs) on semipolar (1011) GaN bulk substrates. The LEDs have a dimension of 300 ×300 µm2 and are packaged in an epoxy resin. The output power and external quantum efficiency (EQE) at a driving current of 20 mA were 20.58 mW and 33.91% respectively, with peak electroluminescence (EL) emission wavelength at 411 nm. The LEDs show minimal shift in peak EL wavelength with increasing drive current along with a high EQE.