Applied Physics Letters · 1986 · 197 citations · 4 references
EngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor PhysicsStrain EngineeringBandwidthInternal Quantum EfficiencyMolecular Beam EpitaxyP-i-n PhotodetectorsPhotodetector MaterialsResponse BandwidthStrain EffectsSuperlattice Growth
Properties of GexSi1−x strained-layer p-i-n detectors, in which the strained-layer superlattice itself was used as an absorption region, have been studied for the first time. These devices were grown on (100)Si by molecular beam epitaxy. Using waveguide geometry we have obtained internal quantum efficiencies on the order of 40% at 1.3 μm in superlattices with the Ge fraction x=0.6. The superlattice detectors show the frequency response bandwidth of over 1 GHz and uniformly excellent electrical characteristics for values of x as large as 0.8.
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Measurement of the band gap of Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures
D. V. Lang, R. People, J. C. Bean et al. · Applied Physics Letters · 1985 · 311 citations
Modulation doping in Ge<i>x</i>Si1−<i>x</i>/Si strained layer heterostructures
R. People, J. C. Bean, D. V. Lang et al. · Applied Physics Letters · 1984 · 302 citations