Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende In_<i>x</i>Ga_{1 <i>x</i>}N

Abstract

We report band offset calculations for lattice-matched and pseudomorphically strained InxGa1−xN/InyGa1−yN heterointerfaces using the model solid theory combined with ab initio calculations. From the results obtained, we have calculated the bandgap of bulk InxGa1−xN on GaN as a function of the indium composition. We have also simulated the band edges of an InxGa1−xN/GaN heterostructure. A self-consistent analysis is made to investigate the effect of strains on the interband transitions with the aim of achieving emissions at both visible and near infrared wavelengths. An attempt to explain the results obtained will be presented.